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Browsing by Author Williams, J. S.

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Showing results 1 to 20 of 42

An in situ electrical measurement technique via a conducting diamond tip for nanoindentation in silicon

Author(s)Ruffell, S.; Bradby, J. E.; Williams, J. S., et al
TypeJournal article
Date Published2007
Date Created-
01_Kucheyev_Cathodoluminescence_depth_2001.pdf.jpg

Cathodoluminescence depth profiling of ion-implanted GaN

Author(s)Kucheyev, S. O.; Toth, M.; Phillips, M. R., et al
TypeJournal article
Date Published1-Jan-2001
Date Created-
01_Bradby_Contact-induced_defect_2002.pdf.jpg

Contact-induced defect propagation in ZnO

Author(s)Bradby, J. E.; Kucheyev, S. O.; Williams, J. S., et al
TypeJournal article
Date Published17-Jun-2002
Date Created-

Correlation of indentation-induced phase transformations with the degree of relaxation of ion-implanted amorphous silicon

Author(s)Bayu Aji, Leonardus B.; Ruffell, S.; Haberl, Bianca, et al
TypeJournal article
Date Published2013
Date Created-
01_Kucheyev_Deformation_behavior_of_2001.pdf.jpg

Deformation behavior of ion-beam-modified GaN

Author(s)Kucheyev, S. O.; Bradby, J. E.; Williams, J. S., et al
TypeJournal article
Date Published8-Jan-2001
Date Created-
01_Zhu_Direct_observation_of_2001.pdf.jpg

Direct observation of irradiation-induced nanocavity shrinkage in Si

Author(s)Zhu, X. F.; Williams, J. S.; Conway, M. J., et al
TypeJournal article
Date Published19-Nov-2001
Date Created-
01_Williams_Direct_observation_of_voids_in_2001.pdf.jpg

Direct observation of voids in the vacancy excess region of ion bombarded silicon

Author(s)Williams, J. S.; Conway, M. J.; Williams, B. C., et al
TypeJournal article
Date Published7-May-2001
Date Created-
01_Kucheyev_Disordering_and_anomalous_2001.pdf.jpg

Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures

Author(s)Kucheyev, S. O.; Williams, J. S.; Zou, J., et al
TypeJournal article
Date Published5-Mar-2001
Date Created-
01_Johnson_Dopant_effects_on_the_2012.pdf.jpg

Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

Author(s)Johnson, B. C.; Villis, B. J.; Burgess, J. E., et al
TypeJournal article
Date Published10-May-2012
Date Created-
01_Ruffell_Effect_of_hydrogen_on_2009.pdf.jpg

Effect of hydrogen on nanoindentation-induced phase transformations in amorphous silicon

Author(s)Ruffell, S.; Vedi, J.; Bradby, J. E., et al
TypeJournal article
Date Published17-Dec-2009
Date Created-
01_Kucheyev_Effect_of_irradiation_2002.pdf.jpg

Effect of irradiation temperature and ion flux on electrical isolation of GaN

Author(s)Kucheyev, S. O.; Boudinov, H.; Williams, J. S., et al
TypeJournal article
Date Published1-Apr-2002
Date Created-
01_Ruffell_Effect_of_oxygen_concentration_2009.pdf.jpg

Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon

Author(s)Ruffell, S.; Vedi, J.; Bradby, J. E., et al
TypeJournal article
Date Published21-Apr-2009
Date Created-
01_Kucheyev_Effect_of_the_density_of_2001.pdf.jpg

Effect of the density of collision cascades on implantation damage in GaN

Author(s)Kucheyev, S. O.; Williams, J. S.; Titov, A. I., et al
TypeJournal article
Date Published30-Apr-2001
Date Created-
01_Kucheyev_Effects_of_excitation_density_2001.pdf.jpg

Effects of excitation density on cathodoluminescence from GaN

Author(s)Kucheyev, S. O.; Toth, M.; Phillips, M. R., et al
TypeJournal article
Date Published1-Oct-2001
Date Created-
01_Boudinov_Electrical_isolation_of_GaN_by_2001.pdf.jpg

Electrical isolation of GaN by MeV ion irradiation

Author(s)Boudinov, H.; Kucheyev, S. O.; Williams, J. S., et al
TypeJournal article
Date Published12-Feb-2001
Date Created-
Rapp L. et al Experimental observation for 2014.pdf.jpg

Experimental observation for new polymorphs of silicon formed through ultrafast-laser-induced microexplosion

Author(s)Rapp, L.; Haberl, Bianca; Pickard, Chris, et al
TypeConference paper
Date Published2014
Date Created-
01_Ruffell_Formation_and_growth_of_2007.pdf.jpg

Formation and growth of nanoindentation-induced high pressure phases in crystalline and amorphous silicon

Author(s)Ruffell, S.; Bradby, J. E.; Williams, J. S., et al
TypeJournal article
Date Published26-Sep-2007
Date Created-

Giant pop-ins in nanoindented silicon and germanium caused by lateral cracking

Author(s)Oliver, D. J.; Lawn, B. R.; Cook, R. F., et al
TypeJournal article
Date Published2008
Date Created-
01_Ruffell_High_pressure_crystalline_2006.pdf.jpg

High pressure crystalline phase formation during nanoindentation: Amorphous versus crystalline silicon

Author(s)Ruffell, S.; Bradby, J. E.; Williams, J. S.
TypeJournal article
Date Published1-Sep-2006
Date Created-
01_Ruffell_Identification_of_2007.pdf.jpg

Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization

Author(s)Ruffell, S.; Bradby, J. E.; Fujisawa, N., et al
TypeJournal article
Date Published30-Apr-2007
Date Created-

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