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Browsing by Author Wernersson, Lars-Erik

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Showing results 3 to 19 of 19

Characterization of GaSb nanowires grown by MOVPE

Author(s)Jeppsson, Mattias; Dick, Kimberley A.; Nilsson, H, et al
TypeJournal article
Date Published2008
Date Created-

Comparing InSb, InAs and InSb/InAs nanowire MOSFETs

Author(s)Nilsson, H; Caroff, Philippe; Lind, Erik, et al
TypeConference paper
Date Published2009
Date CreatedJune 22-24 2009

Correlation-induced conductance suppression at level degeneracy in a quantum dot

Author(s)Nilsson, H; Karlström, O; Larsson, Marcus, et al
TypeJournal article
Date Published2010
Date Created-

Development of a vertical wrap-gated InAs FET

Author(s)Thelander, Claes; Rehnstedt, Carl; Fröberg, Linus E, et al
TypeJournal article
Date Published2008
Date Created-
01_Astromskas_Doping_Incorporation_in_InAs_2010.pdf.jpg

Doping Incorporation in InAs nanowires characterized by capacitance measurements

Author(s)Astromskas, Gvidas; Storm, Kristian; Karlström, Olov, et al
TypeJournal article
Date Published1-Sep-2010
Date Created-

GaAs/GaSb nanowire heterostructures grown by MOVPE

Author(s)Jeppsson, Mattias; Dick, Kimberley A.; Wagner, Jakob B, et al
TypeJournal article
Date Published2008
Date Created-

Giant, Level-dependent g factors in InSb nanowire quantum dots

Author(s)Nilsson, H; Caroff, Philippe; Thelander, Claes, et al
TypeJournal article
Date Published2009
Date Created-

Growth of vertical InAs nanowires on heterostructured substrates

Author(s)Roddaro, Stefano; Caroff, Philippe; Biasiol, Giorgio, et al
TypeJournal article
Date Published2009
Date Created-

High-quality InAs/InSb nanowire heterostructures grown by metal-organic vapor-phase epitaxy

Author(s)Caroff, Philippe; Wagner, Jakob B; Dick, Kimberley A., et al
TypeJournal article
Date Published2008
Date Created-

InAs film grown on Si(111) by metalorganic Vapor Phase Epitaxy

Author(s)Caroff, Philippe; Jeppsson, Mattias; Wheeler, D, et al
TypeJournal article
Date Published2008
Date Created-

InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch

Author(s)Caroff, Philippe; Messing, Maria E; Borg, Mattias, et al
TypeJournal article
Date Published2009
Date Created-

InSb nanowire field-effect transistors and quantum-dot devices

Author(s)Nilsson, H; Deng, M. T.; Caroff, Philippe, et al
TypeJournal article
Date Published2011
Date Created-

Movpe growth and structural characterization of extremely lattice-mismatched InP-InSb nanowire heterostructures

Author(s)Borg, B M; Messing, Maria E; Caroff, Philippe, et al
TypeConference paper
Date Published2009
Date CreatedMay 10-14 2009

Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method

Author(s)Astromskas, Gvidas; Storm, Kristian; Caroff, Philippe, et al
TypeJournal article
Date Published2011
Date Created-
01_Nilsson_Temperature_dependent_2010.pdf.jpg

Temperature dependent properties of InSb and InAs nanowire field-effect transistors

Author(s)Nilsson, Henrik A.; Caroff, Philippe; Thelander, Claes, et al
TypeJournal article
Date Published16-Apr-2010
Date Created-

Time-resolved X-ray diffraction investigation of the modified phonon dispersion in InSb nanowires

Author(s)Jurgilaitis, A.; Enquist, H.; Andreasson, B.P., et al
TypeJournal article
Date Published2014
Date Created-
01_Nilsson_Unipolar_and_bipolar_operation_2011.pdf.jpg

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

Author(s)Nilsson, Henrik A.; Caroff, Philippe; Lind, Erik, et al
TypeJournal article
Date Published21-Sep-2011
Date Created-

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