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Browsing by Author Svensson, Bengt Gunnar

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Showing results 1 to 14 of 14

A Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC

Author(s)Wong-Leung, Jennifer; Linnarsson, M K; Svensson, Bengt Gunnar
TypeJournal article
Date Published2003
Date Created-

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

Author(s)Pellegrino, P; Leveque, P; Lalita, J, et al
TypeJournal article
Date Published2001
Date Created-

Anomalous diffusion of intrinsic defects in K+ implanted ZnO using Li as tracer

Author(s)Vines, Lasse; Neuvonen, P.T.; Kuznetsov, A Yu, et al
TypeConference paper
Date Published2012
Date CreatedNovember 28-December 2 2011

Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition

Author(s)Deenapanray, Prakash; Lay, M; Aberg, D, et al
TypeJournal article
Date Published2001
Date Created-

Effects of high temperature annealing on defects and luminescence properties in H implanted ZnO

Author(s)Chan, Keng; Ton-That, Cuong; Vines, Lasse, et al
TypeJournal article
Date Published2014
Date Created-

Equilibrium shape of nano-cavities in H implanted ZnO

Author(s)Chan, Keng; Vines, Lasse; Li, Li (Lily), et al
TypeJournal article
Date Published2015
Date Created-

Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon

Author(s)Leveque, P; Hallen, A; Svensson, Bengt Gunnar, et al
TypeJournal article
Date Published2003
Date Created-

Ion implantation in 4H-SiC

Author(s)Wong-Leung, Jennifer; Janson, M S; Kuznetsov, A Yu, et al
TypeJournal article
Date Published2008
Date Created-

Ion implantation induced defects in ZnO

Author(s)Vines, Lasse; Wong-Leung, Jennifer; Jagadish, Chennupati, et al
TypeJournal article
Date Published2012
Date Created-

Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation

Author(s)Monakhov, E V; Wong-Leung, Jennifer; Kuznetsov, A Yu, et al
TypeJournal article
Date Published2002
Date Created-

Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC

Author(s)Wong-Leung, Jennifer; Linnarsson, M K; Svensson, Bengt Gunnar, et al
TypeJournal article
Date Published2005
Date Created-

Separation of Vacancy and Interstitial Depth Profiles in Proton- and Boron-Implanted Silicon

Author(s)Pellegrino, P; Leveque, P; Kortegaard-Nielsen, H, et al
TypeJournal article
Date Published2002
Date Created-

Solubility Limits of Dopants in 4H-SiC

Author(s)Linnarsson, M K; Zimmermann, U; Wong-Leung, Jennifer, et al
TypeJournal article
Date Published2003
Date Created-

Structural and Optical properties of H implanted ZnO

Author(s)Chan, Keng; Ye, Jiandong; Parkinson, Patrick, et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012
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