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Browsing by Author Svensson, B. G.

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Showing results 4 to 9 of 9
01_Wong-Leung_Effect_of_crystal_orientation_2003.pdf.jpg

Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals

Author(s)Wong-Leung, Jennifer; Janson, M. S.; Svensson, B. G.
TypeJournal article
Date Published1-Jun-2003
Date Created-
01_Wong-Leung_Electric_field_assisted_2008.pdf.jpg

Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC

Author(s)Wong-Leung, Jennifer; Svensson, B. G.
TypeJournal article
Date Published9-Apr-2008
Date Created-
01_Slotte_Fluence,_flux,_and_2005.pdf.jpg

Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC

Author(s)Slotte, J.; Saarinen, K.; Janson, M. S., et al
TypeJournal article
Date Published6-Jan-2005
Date Created-
01_Pellegrino_Separation_of_vacancy_and_2001.pdf.jpg

Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

Author(s)Pellegrino, P.; Lévêque, P.; Wong-Leung, Jennifer, et al
TypeJournal article
Date Published28-May-2001
Date Created-
01_Linnarsson_Solubility_limit_and_2001.pdf.jpg

Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

Author(s)Linnarsson, M K; Janson, M. S; Zimmermann, U., et al
TypeJournal article
Date Published24-Sep-2001
Date Created-
01_Lévêque_Vacancy_and_interstitial_depth_2003.pdf.jpg

Vacancy and interstitial depth profiles in ion-implanted silicon

Author(s)Lévêque, P.; Nielsen, H. Kortegaard; Pellegrino, P., et al
TypeJournal article
Date Published15-Jan-2003
Date Created-

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