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Browsing by Author Reuter, D

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Showing results 1 to 5 of 5

Can insulating the gates lead us to stable modulation-doped hole quantum devices?

Author(s)Waddington, D. E. J.; Burke, Anthony; Fricke, S, et al
TypeConference paper
Date Published2010
Date CreatedDecember 12-15 2010

Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy

Author(s)Lei, Wen; Nothoff, C; Lorke, A, et al
TypeJournal article
Date Published2010
Date Created-

Magnetic-field-induced modification of the wave-functions in InAs quantum dots

Author(s)Lei, Wen; Wibbelhoff, O; Notthoff, C, et al
TypeJournal article
Date Published2008
Date Created-

Origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Author(s)Burke, Anthony; Waddington, D. E. J.; Carrad, D. J., et al
TypeJournal article
Date Published2012
Date Created-

The Origin of Gate Hysteresis in p-type Si-doped AIGaAs/GaAs Heterostructures

Author(s)Carrad, D. J.; Burke, Anthony; Waddington, D. E. J., et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012
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