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Browsing by Author Park, Sangsu

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Showing results 1 to 12 of 12

Complementary resistive switching in niobium oxide-based resistive memory devices

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Park, Sangsu, et al
TypeJournal article
Date Published2013
Date Created-

Diode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo, et al
TypeJournal article
Date Published2011
Date Created-

Filament-type resistive switching in homogeneous Bi-layer Pr0.7Ca0.3MnO3 thin film memory devices

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa, et al
TypeJournal article
Date Published2011
Date Created-

Highly uniform and reliable resistance switching properties in bilayer WO x/NbO x RRAM devices

Author(s)Sadaf, Sharif Md.; Liu, Xinjun; Son, Myungwoo, et al
TypeJournal article
Date Published2012
Date Created-

Improved resistive switching properties in Pt/Pr0.7Ca 0.3MnO3/Y2O3-stabilized ZrO 2/W via-hole structures

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Park, Sangsu, et al
TypeJournal article
Date Published2011
Date Created-

Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3 devices

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa, et al
TypeJournal article
Date Published2010
Date Created-

Low-power and controllable memory window in Pt/Pr 0.7Ca 0.3MnO 3/yttria-stabilized zirconia/w resistive random-access memory devices

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Park, Jubong, et al
TypeJournal article
Date Published2012
Date Created-

Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer

Author(s)Park, Sangsu; Jung, Seungjae; Siddik, Manzar, et al
TypeJournal article
Date Published2011
Date Created-

Parallel memristive filaments model applicable to bipolar and filamentary resistive switching

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Lee, Joonmyoung, et al
TypeJournal article
Date Published2011
Date Created-

Resistive switching mechanism of a Pr0.7Ca0.3MnO3-based memory device and assessment of its suitability for nano-scale applications

Author(s)Liu, Xinjun; Kim, Insung; Siddik, Manzar, et al
TypeJournal article
Date Published2011
Date Created-

Self-selective characteristics of nanoscale VOx devices for high-density ReRAM applications

Author(s)Son, Myungwoo; Liu, Xinjun; Sadaf, Sharif Md., et al
TypeJournal article
Date Published2012
Date Created-

Ultrathin (<10nm) Nb 2O 5/NbO 2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

Author(s)Kim, Seonghyun; Liu, Xinjun; Park, Jubong, et al
TypeConference paper
Date Published2012
Date CreatedJune 12-14 2012
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