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Browsing by Author Park, Jubong

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Showing results 3 to 10 of 10

Diode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo, et al
TypeJournal article
Date Published2011
Date Created-

Improved resistive switching properties of solution processed ti O 2 thin films

Author(s)Biju, Kuyyadi P.; Liu, Xinjun; Bourim, El Mostafa, et al
TypeJournal article
Date Published2010
Date Created-

Low-power and controllable memory window in Pt/Pr 0.7Ca 0.3MnO 3/yttria-stabilized zirconia/w resistive random-access memory devices

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Park, Jubong, et al
TypeJournal article
Date Published2012
Date Created-

Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer

Author(s)Park, Sangsu; Jung, Seungjae; Siddik, Manzar, et al
TypeJournal article
Date Published2011
Date Created-

Parallel memristive filaments model applicable to bipolar and filamentary resistive switching

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Lee, Joonmyoung, et al
TypeJournal article
Date Published2011
Date Created-

Self-selective characteristics of nanoscale VOx devices for high-density ReRAM applications

Author(s)Son, Myungwoo; Liu, Xinjun; Sadaf, Sharif Md., et al
TypeJournal article
Date Published2012
Date Created-

Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics

Author(s)Jung, Seungjae; Siddik, Manzar; Lee, Wootae, et al
TypeConference paper
Date Published2011
Date CreatedDecember 5-7 2011

Ultrathin (<10nm) Nb 2O 5/NbO 2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

Author(s)Kim, Seonghyun; Liu, Xinjun; Park, Jubong, et al
TypeConference paper
Date Published2012
Date CreatedJune 12-14 2012

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