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Browsing by Author Nandi, Sanjoy

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Showing results 1 to 13 of 13

Determination of thickness and composition of high-k dielectrics using high-energy electrons

Author(s)Grande, Pedro; Vos, Maarten; Venkatachalam, Dinesh, et al
TypeJournal article
Date Published2013
Date Created-
01_Nandi_Effect_of_Electrode_Roughness_2015.pdf.jpg

Effect of Electrode Roughness on Electroforming in HfO2 and Defect-Induced Moderation of Electric-Field Enhancement

Author(s)Nandi, Sanjoy; Liu, Xinjun; Venkatachalam, Dinesh, et al
TypeJournal article
Date Published2015
Date Created-

Effect of Microstructure on Dielectric Breakdown in Amorphous HfO2 Films

Author(s)Nandi, Sanjoy; Llewellyn, David; Belay, Kidane, et al
TypeJournal article
Date Published2014
Date Created-

Effect of Zn Doping on Structural and Magnetic Properties of Ba4Ni2-xZnxFe36O60 Hexaferrites

Author(s)Nandi, Sanjoy; Nath, S.K.; Hossain, A.K.M.A., et al
TypeJournal article
Date Published2014
Date Created-

Finite Element Modeling of Resistive Switching in Nb 2 O 5 -based Memory Device

Author(s)Liu, Xinjun; Nandi, Sanjoy; Venkatachalam, Dinesh, et al
TypeConference paper
Date Published2014
Date CreatedDecember 14-17 2014

Oxygen Self-Diffusion in HfO 2 Studied by Electron Spectroscopy

Author(s)Vos, Maarten; Grande, Pedro; Venkatachalam, Dinesh, et al
TypeJournal article
Date Published2014
Date Created-

Reduced threshold current in NbO 2 selector by engineering device structure

Author(s)Liu, Xinjun; Nandi, Sanjoy; Venkatachalam, Dinesh, et al
TypeJournal article
Date Published2014
Date Created-

Resistive Switching Behavior in HfO 2 with Nb as an Oxygen Exchange Layer

Author(s)Nandi, Sanjoy; Liu, Xinjun; Li, Shuai, et al
TypeConference paper
Date Published2014
Date CreatedDecember 14-17 2014

Self-assembly of an NbO<inf>2</inf> interlayer and configurable resistive switching in Pt/Nb/HfO<inf>2</inf>/Pt structures

Author(s)Nandi, Sanjoy; Liu, Xinjun; Venkatachalam, Dinesh, et al
TypeJournal article
Date Published2015
Date Created-

Temperature Dependence of Threshold Switching in NbOx Thin Films

Author(s)Li, Shuai; Liu, Xinjun; Nandi, Sanjoy, et al
TypeConference paper
Date Published2014
Date CreatedDecember 14-17 2014

The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbO x films

Author(s)Vos, Maarten; Liu, Xinjun; Grande, Pedro, et al
TypeJournal article
Date Published2014
Date Created-

Threshold current reduction for the metal-insulator transition in NbO<inf>2-x</inf>-selector devices: The effect of ReRAM integration

Author(s)Nandi, Sanjoy; Liu, Xinjun; Venkatachalam, Dinesh, et al
TypeJournal article
Date Published2015
Date Created-
01_Liu_Threshold_switching_and_2016.pdf.jpg

Threshold switching and electrical self-oscillation in niobium oxide films

Author(s)Liu, Xinjun; Li, Shuai (Jack); Nandi, Sanjoy, et al
TypeJournal article
Date Published2016
Date Created-
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