Skip navigation
Skip navigation

Browsing by Author MacDonald, Daniel

Or enter first few letters:  
Showing results 71 to 90 of 137

Laser chemical processing (LCP) doping formed through differenct dielectric layers

Author(s)Yang, Xinbo; Fell, Andreas; Xu, Lujia, et al
TypeConference paper
Date Published2013
Date CreatedSeptember 30-October 4 2013

Lifetime degradation mechanism in boron-doped Czochralski silicon

Author(s)Voronkov, V; Falster , R; Batunina, A, et al
TypeConference paper
Date Published2011
Date CreatedSeptember 13-17 2010

Lifetime Spectroscopy and Hydrogenation of Chromium in n- and p-type Cz Silicon

Author(s)Sun, Chang; Liu, An Yao; Rougieux, Fiacre, et al
TypeJournal article
Date Published2015
Date Created-

Lifetime studies on manganese implanted silicon

Author(s)Rosenits, Philipp; MacDonald, Daniel
TypeConference paper
Date Published2006
Date CreatedSeptember 4-8 2006

Measurement and optimization of the recombination current of p+ aluminium doped regions

Author(s)Tan, Jason; Cuevas, Andres; MacDonald, Daniel, et al
TypeConference paper
Date Published2006
Date CreatedSeptember 4-8 2006

Measurement and parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level

Author(s)Zheng, Peiting; Rougieux, Fiacre; MacDonald, Daniel, et al
TypeJournal article
Date Published2014
Date Created-

Measuring and Interpreting the Lifetime of Silicaon Wafers

Author(s)Cuevas, Andres; MacDonald, Daniel
TypeConference paper
Date Published2003
Date CreatedNovember 25 2001

Measuring and interpreting the lifetime of silicon wafers

Author(s)Cuevas, Andres; MacDonald, Daniel
TypeJournal article
Date Published2004
Date Created-

Measuring dopant concentrations in p-type silicon using iron-acceptor pairing monitored by band-to-band photoluminescence

Author(s)Lim, Siew Yee; MacDonald, Daniel
TypeJournal article
Date Published2011
Date Created-

Mechanisms of light-induced degradation in mono- and multicrystalline silicon solar cells

Author(s)Schmidt, Jan; Bothe, Karsten; MacDonald, Daniel, et al
TypeConference paper
Date Published2005
Date CreatedJune 6 2005

Minority carrier lifetime in plasma-textured silicon wafers for solar cells

Author(s)Kumaravelu, G; Alkaisi, M M; MacDonald, Daniel, et al
TypeJournal article
Date Published2005
Date Created-

Minority Carrier Lifetime Properties of Reactive Ion Etched p-Type Float Zone Si

Author(s)Deenapanray, Prakash; Horteis, M; MacDonald, Daniel, et al
TypeJournal article
Date Published2005
Date Created-

Multicrystalline Silicon: a Review of Its Electronic Properties

Author(s)Cuevas, Andres; MacDonald, Daniel
TypeConference paper
Date Published2005
Date CreatedOctober 10 2005

Non-ideal resistive effects in silicon solar cells

Author(s)Stocks, Matthew; MacDonald, Daniel
TypeConference paper
Date Published2000
Date CreatedMay 1 2000

Numerical simulation of gettering and recombination in iron-contaminated boron emitters

Author(s)Weber, Thorsten; Zechner, C.; MacDonald, Daniel, et al
TypeConference paper
Date Published2006
Date CreatedSeptember 4-8 2006

On accurate and quantatative measurements of iron-concentration in multicrystalline silicon by iron-boron pair association

Author(s)Geerligs, Lambert Johan; Coletti, Gianluca; MacDonald, Daniel
TypeConference paper
Date Published2006
Date CreatedSeptember 4-8 2006

On the electronic improvement of multi-crystalline silicon via gettering and hydrogenation

Author(s)Tan, Jason; Cuevas, Andres; MacDonald, Daniel, et al
TypeJournal article
Date Published2008
Date Created-

OPTIMISED GETTERING AND HYDROGENATION OF MULTI-CRYSTALLINE SILICON WAFERS FOR USE IN SOLAR CELLS

Author(s)Tan, Jason; Cuevas, Andres; MacDonald, Daniel, et al
TypeConference paper
Date Published2007
Date CreatedSeptember 3-7 2007

Oxidation-Induced Inversion Layer in Compensated P-Type Silicon

Author(s)Rougieux, Fiacre; MacDonald, Daniel; McIntosh, Keith, et al
TypeConference paper
Date Published2009
Date CreatedSeptember 21-24 2009

Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon

Author(s)Zheng, Peiting; Rougieux, Fiacre; MacDonald, Daniel, et al
TypeConference paper
Date Published2014
Date CreatedJune 8-13 2014

Updated:  12 April 2016/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator