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Browsing by Author MacDonald, Daniel

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Showing results 17 to 36 of 137

Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

Author(s)MacDonald, Daniel; Mackel, Helmut; Doshi, Sachin, et al
TypeJournal article
Date Published2003
Date Created-

Carrier lifetime studies of strongly compensated P-type czochralski silicon

Author(s)MacDonald, Daniel; Cuevas, Andres; Di Sabatino, M, et al
TypeConference paper
Date Published2008
Date CreatedSeptember 1-4 2008

Characterisation of a Commercial Multicrystalline Silicon Solar Cell Fabrication Process

Author(s)MacDonald, Daniel; Cuevas, Andres; Kerr, Mark, et al
TypeConference paper
Date Published2000
Date CreatedNovember 28 2000

Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

Author(s)Rougieux, Fiacre; MacDonald, Daniel; McIntosh, Keith, et al
TypeJournal article
Date Published2010
Date Created-

Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy

Author(s)Nguyen, Hieu; Rougieux, Fiacre; Yan, Di, et al
TypeJournal article
Date Published2015
Date Created-

Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon

Author(s)Sun, Chang; Liu, An Yao; Phang, Sieu Pheng, et al
TypeJournal article
Date Published2015
Date Created-

Compensation Engineering for Silicon Solar Cells

Author(s)Cuevas, Andres; Forster, Maxime; Rougieux, Fiacre, et al
TypeConference paper
Date Published2011
Date CreatedJune 26-July 1 2011

Contactless determination of the injection dependent carrier mobility sum in silicon

Author(s)Rougieux, Fiacre; Zheng, Peiting; Thiboust, Matthieu, et al
TypeConference paper
Date Published2011
Date CreatedJune 19-24 2011

Contrast Enhancement of Luminescence Images via Point-Spread Deconvolution

Author(s)Walters, Daniel; Liu, An Yao; Franklin, Evan, et al
TypeConference paper
Date Published2012
Date CreatedJune 3-8 2012

Damage studies in dry etched textured silicon surfaces

Author(s)Kumaravelu, G; Alkaisi, M M; Bittar, A, et al
TypeJournal article
Date Published2004
Date Created-

Dependence of phosphorous gettering of multicrystalline silicon on diffusion sheet resistance and ingot position

Author(s)Batzner, Derk; Tan, Jason; Hanton, Kathryn, et al
TypeConference paper
Date Published2005
Date CreatedJune 6 2005

DETAILED STUDIES OF MANGANESE IN SILICON USING LIFETIME SPECTROSCOPY AND DEEP-LEVELTRANSIENT SPECTROSCOPY

Author(s)Rosenits, P; Roth, T; Diez, Stephan, et al
TypeConference paper
Date Published2007
Date CreatedSeptember 3-7 2007

Detection and reduction of iron impurities in silicon solar cells

Author(s)MacDonald, Daniel; Phang, Sieu Pheng; Liu, An Yao
TypeConference paper
Date Published2012
Date CreatedNovember 19-23 2012

Direct comparison of the electrical properties of multicrystalline silicon materials for solar cells: Conventional p-type, n-type and high performance p-type

Author(s)Sio, Hang Cheong (Kelvin); MacDonald, Daniel
TypeJournal article
Date Published2016
Date Created-

Effect of boron codoping and phosphorus concentration on phosphorus diffusion gettering

Author(s)Phang, Sieu Pheng; MacDonald, Daniel
TypeJournal article
Date Published2014
Date Created-

EFFECTIVE LIFETIME CHARACTERISATION OF A ROOM TEMPERATURE META-STABLE DEFECT IN N-TYPE 5 ΩCM FZ PHOSPHORUS-DIFFUSED OXIDE-PASSIVATED SILICON

Author(s)Thomson, Andrew; McIntosh, Keith; MacDonald, Daniel
TypeConference paper
Date Published2008
Date CreatedSeptember 1-4 2008

Effects of Solar Cell Processing Steps on Dislocation Luminescence in Multicrystalline Silicon

Author(s)Nguyen, Hieu; Rougieux, Fiacre; Wang, Fan, et al
TypeJournal article
Date Published2015
Date Created-

Electrical properties of different types of grain boundaries in multicrystalline silicon by photoluminescence imaging

Author(s)Sio, Hang Cheong (Kelvin); Trupke, T; Phang, Sieu Pheng, et al
TypeConference paper
Date Published2012
Date CreatedSeptember 24-28 2012

ELECTRON CAPTURE CROSS SECTION OF IRON-BORON PAIRS IN CRYSTALLINE SILICON OVER THE TEMPERATURE RANGE 0 - 100 oC

Author(s)Paudyal, Bijaya; McIntosh, Keith; MacDonald, Daniel
TypeConference paper
Date Published2008
Date CreatedSeptember 1-4 2008

Electronic and structural properties of amorphous silicon on crystalline silicon wafers

Author(s)Mitchell, Jonathon; MacDonald, Daniel; Cuevas, Andres, et al
TypeConference paper
Date Published2005
Date CreatedJune 6 2005

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