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Browsing by Author Lv, Yegang

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Advantages of Zn 1.25 Sb 2 Te 3 material for phase change memory

Author(s)Wang, Guoxiang; Nie, Qiuhua; Shen, Xiang, et al
TypeJournal article
Date Published2012
Date Created-

Improved thermal and electrical properties of Al-doped Ge 2 Sb 2 Te 5 films for phase-change random access memory

Author(s)Wang, Guoxiang; Shen, Xiang; Nie, Qiuhua, et al
TypeJournal article
Date Published2012
Date Created-
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