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Browsing by Author Jones, K S

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Showing results 1 to 14 of 14

A brief review of doping issues in III-V semiconductors

Author(s)Jones, K S; Lind, A. G.; Hatem, C., et al
TypeConference paper
Date Published2013
Date CreatedMay 12-17 2013

Amorphization and graphitization of single-crystal diamond - A transmission electron microscopy study

Author(s)Hickey, D P; Jones, K S; Elliman, Robert
TypeJournal article
Date Published2009
Date Created-

Boron diffusion in amorphous silicon-germanium alloys

Author(s)Edelman, L A; Phen, M S; Jones, K S, et al
TypeJournal article
Date Published2008
Date Created-

Defects in Ge and Si caused by 1 MeV Si+ implantation

Author(s)Hickey, D P; Bryan, Z L; Jones, K S, et al
TypeJournal article
Date Published2008
Date Created-

Effect of carbon codoping on boron diffusion in amorphous silicon

Author(s)Edelman, L A; Jin, S; Jones, K S, et al
TypeJournal article
Date Published2008
Date Created-

Effect of low Ge content on B diffusion in amorphous SiGe alloys

Author(s)Edelman, L A; Elliman, Robert; Rubin, L, et al
TypeJournal article
Date Published2008
Date Created-

Effect of n- and p-type dopants on patterned amorphous regrowth

Author(s)Morarka, S; Rudawski, N G; Law, M E, et al
TypeJournal article
Date Published2010
Date Created-

Elimination and quantification of oxidation induced interstitial injection via Ge implants

Author(s)Martin, Thomas P.; Jones, K S; Camillo-Castillo, Renata A., et al
TypeConference paper
Date Published2017
Date CreatedMay 28 - June 1 2017

Insights for void formation in ion-implanted Ge

Author(s)Darby, B.L.; Yates, B.R.; Rudawski, N G, et al
TypeJournal article
Date Published2011
Date Created-

Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries

Author(s)Rudawski, N G; Yates, B.R.; Holzworth, M R, et al
TypeJournal article
Date Published2013
Date Created-

Modeling Solid Phase Epitaxial Growth for Patterned Ge Substrates

Author(s)Darby, B.L.; Yates, B.R.; Kumar, Ashish, et al
TypeJournal article
Date Published2013
Date Created-

Modeling two-dimensional solid-phase epitaxial regrowth using level set methods

Author(s)Morarka, S; Rudawski, N G; Law, M E, et al
TypeJournal article
Date Published2009
Date Created-

Quantification of germanium-induced suppression of interstitial injection during oxidation of silicon

Author(s)Martin, Thomas P.; Jones, K S; Camillo-Castillo, Renata A., et al
TypeJournal article
Date Published2017
Date Created-

Stressed multidirectional solid-phase epitaxial growth of Si

Author(s)Rudawski, N G; Jones, K S; Morarka, S, et al
TypeJournal article
Date Published2009
Date Created-
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