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Browsing by Author Jagadish, Chennupati

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Showing results 190 to 209 of 540

ICP Dry Etching of ZnO and Effects of Hydrogen

Author(s)Ip, K; Overberg, M E; Baik, K W, et al
TypeJournal article
Date Published2003
Date Created-

Identification of Hydrogen Related Defects in Proton Implanted Float-zone Silicon

Author(s)Leveque, P; Hallen, A; Svensson, Bengt Gunnar, et al
TypeJournal article
Date Published2003
Date Created-

III-V Compound SC for Optoelectronic Devices

Author(s)Mokkapati, Sudha; Jagadish, Chennupati
TypeJournal article
Date Published2009
Date Created-

III-V compound semiconductor nanowires

Author(s)Paiman, Suriati; Joyce, Hannah J; Kang, Jung-Hyun, et al
TypeConference paper
Date Published2009
Date CreatedJuly 26-30 2009

III-V compound semiconductor nanowires

Author(s)Joyce, Hannah J; Paiman, Suriati; Gao, Qiang, et al
TypeConference paper
Date Published2009
Date CreatedJune 2-5 2009

III-V compound semiconductor nanowires for optoelectronic applications

Author(s)Guo, Yanan; Joyce, Hannah J; Kim, Yong, et al
TypeConference paper
Date Published2007
Date Created16 December 2007 through 20 December 2007

III-V compound semiconductor nanowires for optoelectronic device applications

Author(s)Gao, Qiang; Joyce, Hannah J; Paiman, Suriati, et al
TypeJournal article
Date Published2011
Date Created-

III-V compound semiconductor nanowires for optoelectronic devices

Author(s)Gao, Qiang; Jackson, Howard E; Smith, Leigh M, et al
TypeConference paper
Date Published2011
Date CreatedAugust 28 - September 1 2011

III-V nanowires for optoelectronic applications

Author(s)Jiang, Nian; Lee, Yu-Heng (Jaret); Saxena, Dhruv, et al
TypeConference paper
Date Published2012
Date CreatedDecember 17-19 2012

III-V semiconductor nanowire lasers

Author(s)Mokkapati, Sudha; Saxena, Dhruv; Jiang, Nian, et al
TypeConference paper
Date Published2014
Date CreatedSeptember 7-10 2014

III-V semiconductor nanowires for optoelectronic device applications

Author(s)Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati, et al
TypeJournal article
Date Published2011
Date Created-

III-V semiconductor nanowires for optoelectronic device applications

Author(s)Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati, et al
TypeJournal article
Date Published2011
Date Created-

Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires

Author(s)Perera, S; Fickenscher, M A; Shi, Teng, et al
TypeJournal article
Date Published2013
Date Created-

Imaging Charge Trap Distributions in GaN Using Environmental Scanning Electron Micrsocopy

Author(s)Toth, M; Kucheyev, Sergei; Williams, James, et al
TypeJournal article
Date Published2000
Date Created-

Implant Isolation of AlGaAs Multilayer DBR

Author(s)Coelho, A V P; Boudinov, H; Lippen, T V, et al
TypeJournal article
Date Published2004
Date Created-
isolation_pGaAs.pdf.jpg

Implant isolation of Zn-dop GaAs epilayers : effects of ion species, doping concentration, and implantation temperature

Author(s)Deenapanray, P.N.K; Gao, Q; Jagadish, Chennupati
TypeJournal article
Date Published2003
Date Created2003

Implantation Angle Dependent Study of Vacancy Related Defect Profiles in Ion Implanted Silicon

Author(s)Lay, M D H; McCallum, Jeffrey C; Jagadish, Chennupati
TypeJournal article
Date Published2003
Date Created-

Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation

Author(s)Lee, Yu-Heng (Jaret); Li, Zhe; Fu, Lan, et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012

Improved performance of GaAs-based terahertz emitters

Author(s)Headley, Carl; Fu, Lan; Parkinson, Patrick, et al
TypeConference paper
Date Published2010
Date CreatedSeptember 5-10 2010

Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation

Author(s)Headley, Carl; Fu, Lan; Parkinson, Patrick Wallace, et al
TypeJournal article
Date Published2011
Date Created-

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