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Browsing by Author Jagadish, C.

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01_Fu_Effect_of_GaP_strain_2007.pdf.jpg

Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Author(s)Fu, Lan; McKerracher, I.; Jagadish, C., et al
TypeJournal article
Date Published15-Aug-2007
Date Created-
01_Wong-Leung_Effect_of_implant_temperature_2001.pdf.jpg

Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon

Author(s)Wong-Leung, Jennifer; Jagadish, C.; Conway, M. J., et al
TypeJournal article
Date Published1-Mar-2001
Date Created-
01_Fatima_Effect_of_ion_mass_on_the_1999.pdf.jpg

Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

Author(s)Fatima, S.; Wong-Leung, Jennifer; Fitz Gerald, J., et al
TypeJournal article
Date Published22-Feb-1999
Date Created-
01_Kucheyev_Effect_of_irradiation_2002.pdf.jpg

Effect of irradiation temperature and ion flux on electrical isolation of GaN

Author(s)Kucheyev, S. O.; Boudinov, H.; Williams, J. S., et al
TypeJournal article
Date Published1-Apr-2002
Date Created-
01_Lei_Effect_of_matrix_material_on_2009.pdf.jpg

Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures

Author(s)Lei, W.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published2009
Date Created-
01_Kucheyev_Effect_of_the_density_of_2001.pdf.jpg

Effect of the density of collision cascades on implantation damage in GaN

Author(s)Kucheyev, S. O.; Williams, J. S.; Titov, A. I., et al
TypeJournal article
Date Published30-Apr-2001
Date Created-
01_Xu_Effects_of_annealing_and_2009.pdf.jpg

Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Author(s)Xu, H. Y.; Guo, Y. N.; Wang, Y., et al
TypeJournal article
Date Published23-Oct-2009
Date Created-
01_Kucheyev_Effects_of_excitation_density_2001.pdf.jpg

Effects of excitation density on cathodoluminescence from GaN

Author(s)Kucheyev, S. O.; Toth, M.; Phillips, M. R., et al
TypeJournal article
Date Published1-Oct-2001
Date Created-
01_Fu_Effects_of_rapid_thermal_2006.pdf.jpg

Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

Author(s)Fu, Lan; McKerracher, I.; Wong-Leung, Jennifer, et al
TypeJournal article
Date Published13-Jun-2006
Date Created-
01_Jolley_Effects_of_well_thickness_on_2008.pdf.jpg

Effects of well thickness on the spectral properties of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈As quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, G; Fu, Lan; Jagadish, C., et al
TypeJournal article
Date Published14-May-2008
Date Created-
01_Deenapanray_Electrical_characterization_of_2005.pdf.jpg

Electrical characterization of p-GaAs epilayers disordered by doped spin-on-glass

Author(s)Deenapanray, P. N. K.; Petravic, M.; Jagadish, C., et al
TypeJournal article
Date Published19-Jan-2005
Date Created-
01_Boudinov_Electrical_isolation_of_GaN_by_2001.pdf.jpg

Electrical isolation of GaN by MeV ion irradiation

Author(s)Boudinov, H.; Kucheyev, S. O.; Williams, J. S., et al
TypeJournal article
Date Published12-Feb-2001
Date Created-
01_Carmody_Electrical_isolation_of_n-_and_2003.pdf.jpg

Electrical isolation of n- and p-In₀.₅₃Ga₀.₄₇As epilayers using ion irradiation

Author(s)Carmody, C.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published15-Nov-2003
Date Created-
01_Boudinov_Electrical_isolation_of_n-type_2001.pdf.jpg

Electrical isolation of n-type and p-type InP layers by proton bombardment

Author(s)Boudinov, H.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published15-May-2001
Date Created-
01_Giniũnas_Electron_and_trap_dynamics_in_2001.pdf.jpg

Electron and trap dynamics in As-ion-implanted and annealed GaAs

Author(s)Giniũnas, L.; Danielius, R.; Jagadish, C., et al
TypeJournal article
Date Published19-Mar-2001
Date Created-
01_Chen_Elemental_diffusion_during_the_2014.pdf.jpg

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Author(s)Chen, Z. B.; Lei, W.; Chen, B., et al
TypeJournal article
Date Published15-Jan-2014
Date Created-
01_Lei_Engineering_the_composition,_2013.pdf.jpg

Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique

Author(s)Lei, W.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published25-Jan-2013
Date Created-
01_Gao_Enhanced_optical_properties_of_2004.pdf.jpg

Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Author(s)Gao, Q.; Jagadish, C.; Sun, B. Q., et al
TypeJournal article
Date Published5-Apr-2004
Date Created-
01_Lei_Enhanced_photoluminescence_2010.pdf.jpg

Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer

Author(s)Lei, W.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published24-May-2010
Date Created-
01_Sun_Epitaxially_grown_GaAsN_random_2003.pdf.jpg

Epitaxially grown GaAsN random laser

Author(s)Sun, B. Q.; Gal, M.; Gao, Q., et al
TypeJournal article
Date Published15-May-2003
Date Created-

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