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Browsing by Author Jagadish, C.

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01_Chan_Defect_formation_and_thermal_2013.pdf.jpg

Defect formation and thermal stability of H in high dose H implanted ZnO

Author(s)Chan, K. S.; Vines, L.; Johansen, K. M., et al
TypeJournal article
Date Published29-Aug-2013
Date Created-
01_Kucheyev_Deformation_behavior_of_2001.pdf.jpg

Deformation behavior of ion-beam-modified GaN

Author(s)Kucheyev, S. O.; Bradby, J. E.; Williams, J. S., et al
TypeJournal article
Date Published8-Jan-2001
Date Created-
01_Fickenscher_Direct_imaging_of_the_spatial_2011.pdf.jpg

Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires

Author(s)Fickenscher, M. A.; Jackson, H. E.; Smith, L. M., et al
TypeJournal article
Date Published29-Dec-2011
Date Created-
01_Kucheyev_Disordering_and_anomalous_2001.pdf.jpg

Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures

Author(s)Kucheyev, S. O.; Williams, J. S.; Zou, J., et al
TypeJournal article
Date Published5-Mar-2001
Date Created-
01_Johnson_Dopant_effects_on_the_2012.pdf.jpg

Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

Author(s)Johnson, B. C.; Villis, B. J.; Burgess, J. E., et al
TypeJournal article
Date Published10-May-2012
Date Created-
01_Drozdowicz-Tomsia_Doping_effect_on_dark_currents_2006.pdf.jpg

Doping effect on dark currents in In₀.₅Ga₀.₅As∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

Author(s)Drozdowicz-Tomsia, K.; Goldys, E. M.; Fu, Lan, et al
TypeJournal article
Date Published15-Sep-2006
Date Created-
01_Kuznetsov_Dynamic_annealing_in_ion_2003.pdf.jpg

Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

Author(s)Kuznetsov, A. Yu.; Wong-Leung, Jennifer; Hallén, A., et al
TypeJournal article
Date Published1-Dec-2003
Date Created-
01_Fu_Effect_of_GaP_strain_2007.pdf.jpg

Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Author(s)Fu, Lan; McKerracher, I.; Jagadish, C., et al
TypeJournal article
Date Published15-Aug-2007
Date Created-
01_Wong-Leung_Effect_of_implant_temperature_2001.pdf.jpg

Effect of implant temperature on secondary defects created by MeV Sn implantation in silicon

Author(s)Wong-Leung, Jennifer; Jagadish, C.; Conway, M. J., et al
TypeJournal article
Date Published1-Mar-2001
Date Created-
01_Fatima_Effect_of_ion_mass_on_the_1999.pdf.jpg

Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

Author(s)Fatima, S.; Wong-Leung, Jennifer; Fitz Gerald, J., et al
TypeJournal article
Date Published22-Feb-1999
Date Created-
01_Kucheyev_Effect_of_irradiation_2002.pdf.jpg

Effect of irradiation temperature and ion flux on electrical isolation of GaN

Author(s)Kucheyev, S. O.; Boudinov, H.; Williams, J. S., et al
TypeJournal article
Date Published1-Apr-2002
Date Created-
01_Lei_Effect_of_matrix_material_on_2009.pdf.jpg

Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures

Author(s)Lei, W.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published2009
Date Created-
01_Kucheyev_Effect_of_the_density_of_2001.pdf.jpg

Effect of the density of collision cascades on implantation damage in GaN

Author(s)Kucheyev, S. O.; Williams, J. S.; Titov, A. I., et al
TypeJournal article
Date Published30-Apr-2001
Date Created-
01_Xu_Effects_of_annealing_and_2009.pdf.jpg

Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Author(s)Xu, H. Y.; Guo, Y. N.; Wang, Y., et al
TypeJournal article
Date Published23-Oct-2009
Date Created-
01_Kucheyev_Effects_of_excitation_density_2001.pdf.jpg

Effects of excitation density on cathodoluminescence from GaN

Author(s)Kucheyev, S. O.; Toth, M.; Phillips, M. R., et al
TypeJournal article
Date Published1-Oct-2001
Date Created-
01_Fu_Effects_of_rapid_thermal_2006.pdf.jpg

Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

Author(s)Fu, Lan; McKerracher, I.; Wong-Leung, Jennifer, et al
TypeJournal article
Date Published13-Jun-2006
Date Created-
01_Jolley_Effects_of_well_thickness_on_2008.pdf.jpg

Effects of well thickness on the spectral properties of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈As quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, G; Fu, Lan; Jagadish, C., et al
TypeJournal article
Date Published14-May-2008
Date Created-
01_Deenapanray_Electrical_characterization_of_2005.pdf.jpg

Electrical characterization of p-GaAs epilayers disordered by doped spin-on-glass

Author(s)Deenapanray, P. N. K.; Petravic, M.; Jagadish, C., et al
TypeJournal article
Date Published19-Jan-2005
Date Created-
01_Boudinov_Electrical_isolation_of_GaN_by_2001.pdf.jpg

Electrical isolation of GaN by MeV ion irradiation

Author(s)Boudinov, H.; Kucheyev, S. O.; Williams, J. S., et al
TypeJournal article
Date Published12-Feb-2001
Date Created-
01_Carmody_Electrical_isolation_of_n-_and_2003.pdf.jpg

Electrical isolation of n- and p-In₀.₅₃Ga₀.₄₇As epilayers using ion irradiation

Author(s)Carmody, C.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published15-Nov-2003
Date Created-

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