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Browsing by Author Jagadish, C.

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01_Jolley_Effects_of_well_thickness_on_2008.pdf.jpg

Effects of well thickness on the spectral properties of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈As quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, G; Fu, Lan; Jagadish, C., et al
TypeJournal article
Date Published14-May-2008
Date Created-
01_Deenapanray_Electrical_characterization_of_2005.pdf.jpg

Electrical characterization of p-GaAs epilayers disordered by doped spin-on-glass

Author(s)Deenapanray, P. N. K.; Petravic, M.; Jagadish, C., et al
TypeJournal article
Date Published19-Jan-2005
Date Created-
01_Boudinov_Electrical_isolation_of_GaN_by_2001.pdf.jpg

Electrical isolation of GaN by MeV ion irradiation

Author(s)Boudinov, H.; Kucheyev, S. O.; Williams, J. S., et al
TypeJournal article
Date Published12-Feb-2001
Date Created-
01_Carmody_Electrical_isolation_of_n-_and_2003.pdf.jpg

Electrical isolation of n- and p-In₀.₅₃Ga₀.₄₇As epilayers using ion irradiation

Author(s)Carmody, C.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published15-Nov-2003
Date Created-
01_Boudinov_Electrical_isolation_of_n-type_2001.pdf.jpg

Electrical isolation of n-type and p-type InP layers by proton bombardment

Author(s)Boudinov, H.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published15-May-2001
Date Created-
01_Giniũnas_Electron_and_trap_dynamics_in_2001.pdf.jpg

Electron and trap dynamics in As-ion-implanted and annealed GaAs

Author(s)Giniũnas, L.; Danielius, R.; Jagadish, C., et al
TypeJournal article
Date Published19-Mar-2001
Date Created-
01_Chen_Elemental_diffusion_during_the_2014.pdf.jpg

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Author(s)Chen, Z. B.; Lei, W.; Chen, B., et al
TypeJournal article
Date Published15-Jan-2014
Date Created-
01_Lei_Engineering_the_composition,_2013.pdf.jpg

Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique

Author(s)Lei, W.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published25-Jan-2013
Date Created-
01_Gao_Enhanced_optical_properties_of_2004.pdf.jpg

Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Author(s)Gao, Q.; Jagadish, C.; Sun, B. Q., et al
TypeJournal article
Date Published5-Apr-2004
Date Created-
01_Lei_Enhanced_photoluminescence_2010.pdf.jpg

Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer

Author(s)Lei, W.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published24-May-2010
Date Created-
01_Sun_Epitaxially_grown_GaAsN_random_2003.pdf.jpg

Epitaxially grown GaAsN random laser

Author(s)Sun, B. Q.; Gal, M.; Gao, Q., et al
TypeJournal article
Date Published15-May-2003
Date Created-
01_Liu_Evidence_of_blocking_effect_on_2001.pdf.jpg

Evidence of blocking effect on carrier trapping process by necking region in very narrow AlGaAs/GaAs V-grooved quantum wire structure

Author(s)Liu, X. Q.; Sasaki, A.; Ohno, N., et al
TypeJournal article
Date Published15-Nov-2001
Date Created-
01_Paladugu_Evolution_of_InAs_branches_in_2007.pdf.jpg

Evolution of InAs branches in InAs/GaAs nanowire heterostructures

Author(s)Paladugu, Mohanchand; Zou, J.; Auchterlonie, G. J., et al
TypeJournal article
Date Published28-Sep-2007
Date Created-
01_Paladugu_Evolution_of_InAs_branches_in_2007.pdf.jpg

Evolution of InAs branches in InAs/GaAs nanowire heterostructures

Author(s)Paladugu, Mohanchand; Zou, J.; Auchterlonie, G. J., et al
TypeJournal article
Date Published28-Sep-2007
Date Created-
01_Slotte_Fluence,_flux,_and_2005.pdf.jpg

Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC

Author(s)Slotte, J.; Saarinen, K.; Janson, M. S., et al
TypeJournal article
Date Published6-Jan-2005
Date Created-
01_Lei_Formation_and_shape_control_of_2009.pdf.jpg

Formation and shape control of InAsSb/InP (001) nanostructures

Author(s)Lei, W.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published7-Jul-2009
Date Created-
01_Barik_High_temperature_rapid_thermal_2007.pdf.jpg

High temperature rapid thermal annealing of phosphorous ion implanted InAs∕InP quantum dots

Author(s)Barik, S.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published27-Feb-2007
Date Created-
01_Deenapanray_Implant_isolation_of_Zn-doped_2003.pdf.jpg

Implant isolation of Zn-doped GaAs epilayers: effects of ion species, doping concentration, and implantation temperature

Author(s)Deenapanray, Prakash N. K.; Gao, Q.; Jagadish, C.
TypeJournal article
Date Published1-Jun-2003
Date Created-
01_Kucheyev_Implant_isolation_of_ZnO_2003.pdf.jpg

Implant isolation of ZnO

Author(s)Kucheyev, S. O.; Jagadish, C.; Williams, J. S., et al
TypeJournal article
Date Published1-Mar-2003
Date Created-
01_Gao_Implantation-induced_2003.pdf.jpg

Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition

Author(s)Gao, Q.; Deenapanray, P. N. K.; Jagadish, C., et al
TypeJournal article
Date Published20-Oct-2003
Date Created-

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