Browsing by Author Gao, Q.
Showing results 8 to 15 of 15
Implant isolation of Zn-doped GaAs epilayers: effects of ion species, doping concentration, and implantation temperature
Author(s) | Deenapanray, Prakash N. K.; Gao, Q.; Jagadish, C. |
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Type | Journal article |
Date Published | 1-Jun-2003 |
Date Created | - |
Implantation-induced electrical isolation of GaAsN epilayers grown by metalorganic chemical vapor deposition
Author(s) | Gao, Q.; Deenapanray, P. N. K.; Jagadish, C., et al |
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Type | Journal article |
Date Published | 20-Oct-2003 |
Date Created | - |
Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
Author(s) | Perera, S.; Fickenscher, M. A.; Jackson, H. E., et al |
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Type | Journal article |
Date Published | 6-Aug-2008 |
Date Created | - |
On the nature of radiative recombination in GaAsN
Author(s) | Sun, B. Q.; Gal, M.; Gao, Q., et al |
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Type | Journal article |
Date Published | 2-Dec-2002 |
Date Created | - |
Phase-stepping interferometry of GaAs nanowires: determining nano-wire radius
Author(s) | Little, D. J.; Kuruwita, R. L.; Joyce, A., et al |
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Type | Journal article |
Date Published | 15-Oct-2013 |
Date Created | - |
Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
Author(s) | Mishra, A.; Titova, L. V.; Hoang, T. B., et al |
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Type | Journal article |
Date Published | 26-Dec-2007 |
Date Created | - |
Room temperature photocurrent spectroscopy of single zincblende and wurtzite InP nanowires
Author(s) | Maharjan, A.; Pemasiri, K.; Kumar, P., et al |
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Type | Journal article |
Date Published | 15-May-2009 |
Date Created | - |
Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition
Author(s) | Guo, Y. N.; Zou, J.; Paladugu, Mohanchand, et al |
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Type | Journal article |
Date Published | 6-Dec-2006 |
Date Created | - |
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