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Browsing by Author Fu, Lan

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Showing results 14 to 33 of 118
01_Fu_Effect_of_GaP_strain_2007.pdf.jpg

Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Author(s)Fu, Lan; McKerracher, I.; Jagadish, C., et al
TypeJournal article
Date Published15-Aug-2007
Date Created-

Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, Greg; Xiao, B; Fu, Lan, et al
TypeJournal article
Date Published2009
Date Created-

Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors

Author(s)Jolley, Greg; Fu, Lan; Jagadish, Chennupati, et al
TypeJournal article
Date Published2008
Date Created-
01_Fu_Effects_of_rapid_thermal_2006.pdf.jpg

Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

Author(s)Fu, Lan; McKerracher, I.; Wong-Leung, Jennifer, et al
TypeJournal article
Date Published13-Jun-2006
Date Created-

Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots

Author(s)Gao, Qiang; Fu, Lan; Jagadish, Chennupati, et al
TypeJournal article
Date Published2004
Date Created-
01_Jolley_Effects_of_well_thickness_on_2008.pdf.jpg

Effects of well thickness on the spectral properties of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈As quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, G; Fu, Lan; Jagadish, C., et al
TypeJournal article
Date Published14-May-2008
Date Created-

Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures

Author(s)Buda, Manuela; Hay, J; Fu, Lan, et al
TypeJournal article
Date Published2003
Date Created-
01_Jolley_Electron-hole_recombination_2010.pdf.jpg

Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage

Author(s)Jolley, Greg; Lu, Hao Feng; Fu, Lan, et al
TypeJournal article
Date Published23-Sep-2010
Date Created-
Li et al Enhanced Carrier Collection Efficiency 2015.pdf.jpg

Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells

Author(s)Li, Tian; Lu, Haofeng; Fu, Lan, et al
TypeJournal article
Date Published5-Feb-2015
Date Created-
01_Jolley_Growth_and_confinement_effects_2011.pdf.jpg

Growth and confinement effects in III-V semiconductor nanostructures

Author(s)Jolley, Greg; Fu, Lan; Jagadish, Chennupati, et al
TypeConference paper
Date Published2011
Date CreatedOctober 30-November 2 2011

High efficiency coupling of light from photonic wire lasers into nano-antennas

Author(s)Li, Ziyuan; Hattori, Haroldo; Fu, Lan, et al
TypeConference paper
Date Published2010
Date CreatedDecember 12-15 2010

III-V nanowires for optoelectronic applications

Author(s)Jiang, Nian; Lee, Yu-Heng (Jaret); Saxena, Dhruv, et al
TypeConference paper
Date Published2012
Date CreatedDecember 17-19 2012

Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation

Author(s)Lee, Yu-Heng (Jaret); Li, Zhe; Fu, Lan, et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012

Improved performance of GaAs-based terahertz emitters

Author(s)Headley, Carl; Fu, Lan; Parkinson, Patrick, et al
TypeConference paper
Date Published2010
Date CreatedSeptember 5-10 2010

Improved performance of GaAs-based terahertz emitters via surface passivation and silicon nitride encapsulation

Author(s)Headley, Carl; Fu, Lan; Parkinson, Patrick Wallace, et al
TypeJournal article
Date Published2011
Date Created-

Improved performance of InGaAs/GaAs Quantum Dot Solar Cells using Si-modulation doping

Author(s)Lu, Hao Feng; Fu, Lan; Jolley, Greg, et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012

Improvement of Kink-free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes

Author(s)Buda, Manuela; Fu, Lan; Josyula, L, et al
TypeConference paper
Date Published2003
Date CreatedDecember 11 2002

Improvement of the Kink-free Operation in Ridge-waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge

Author(s)Buda, Manuela; Fu, Lan; Josyula, L, et al
TypeJournal article
Date Published2003
Date Created-

Impurity Free Intermixing for Optoelectronic Device Integration

Author(s)Buda, Manuela; Fu, Lan; Hay, J, et al
TypeConference paper
Date Published2002
Date CreatedMay 12 2002
01_Deenapanray_Impurity-free_disordering_2002.pdf.jpg

Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

Author(s)Deenapanray, Prakash N. K; Gong, Bin; Lamb, R. N, et al
TypeJournal article
Date Published10-Jun-2002
Date Created-

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