Browsing by Author Biju, Kuyyadi P.
Showing results 1 to 16 of 16
Asymmetric bipolar resistive switching in solution-processed Pt/TiO 2/W devices
Author(s) | Biju, Kuyyadi P.; Liu, Xinjun; Bourim, El Mostafa, et al |
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Type | Journal article |
Date Published | 2010 |
Date Created | - |
Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices
Author(s) | Biju, Kuyyadi P.; Liu, Xinjun; Kim, Seonghyun, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Characterization of resistive switching states in W/Pr0.7Ca 0.3MnO3 for a submicron (f250 nm) via-hole structure
Author(s) | Siddik, Manzar; Biju, Kuyyadi P.; Liu, Xinjun, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films
Author(s) | Biju, Kuyyadi P.; Liu, Xinjun; Kim, Seonghyun, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Ferroelectric polarization effect on Al-Nb codoped Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 heterostructure resistive memory
Author(s) | Bourim, El Mostafa; Park, Sangsoo; Liu, Xinjun, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Filament-type resistive switching in homogeneous Bi-layer Pr0.7Ca0.3MnO3 thin film memory devices
Author(s) | Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application
Author(s) | Biju, Kuyyadi P.; Liu, Xinjun; Shin, Jungho, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Improved resistive switching properties in Pt/Pr0.7Ca 0.3MnO3/Y2O3-stabilized ZrO 2/W via-hole structures
Author(s) | Liu, Xinjun; Biju, Kuyyadi P.; Park, Sangsu, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Improved resistive switching properties of solution processed ti O 2 thin films
Author(s) | Biju, Kuyyadi P.; Liu, Xinjun; Bourim, El Mostafa, et al |
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Type | Journal article |
Date Published | 2010 |
Date Created | - |
Improved resistive switching properties of solution-processed TiOx film by incorporating atomic layer deposited TiO2 layer
Author(s) | Kim, Insung; Jung, Seungjae; Shin, Jungho, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Improvement of resistive switching uniformity by introducing a thin NbOx interface layer
Author(s) | Liu, Xinjun; Sadaf, Sharif Md.; Kim, Seonghyun, et al |
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Type | Journal article |
Date Published | 2012 |
Date Created | - |
Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3 devices
Author(s) | Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa, et al |
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Type | Journal article |
Date Published | 2010 |
Date Created | - |
Low-power and controllable memory window in Pt/Pr 0.7Ca 0.3MnO 3/yttria-stabilized zirconia/w resistive random-access memory devices
Author(s) | Liu, Xinjun; Biju, Kuyyadi P.; Park, Jubong, et al |
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Type | Journal article |
Date Published | 2012 |
Date Created | - |
Parallel memristive filaments model applicable to bipolar and filamentary resistive switching
Author(s) | Liu, Xinjun; Biju, Kuyyadi P.; Lee, Joonmyoung, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Resistive switching characteristics and mechanism of thermally grown WOx thin films
Author(s) | Biju, Kuyyadi P.; Liu, Xinjun; Siddik, Manzar, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Resistive switching mechanism of a Pr0.7Ca0.3MnO3-based memory device and assessment of its suitability for nano-scale applications
Author(s) | Liu, Xinjun; Kim, Insung; Siddik, Manzar, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
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