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Browsing by Author Belay, Kidane

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Showing results 5 to 19 of 19

Effect of Ion-implantation on Forming and Resistive-Switching Response of NiO Thin films

Author(s)Elliman, Robert; Nawaz (Saleh), Muhammad; Kim, Sung-I, et al
TypeConference paper
Date Published2010
Date CreatedApril 5-9 2010

Effect of Microstructure on Dielectric Breakdown in Amorphous HfO2 Films

Author(s)Nandi, Sanjoy; Llewellyn, David; Belay, Kidane, et al
TypeJournal article
Date Published2014
Date Created-

Finite Element Modeling of Resistive Switching in Nb 2 O 5 -based Memory Device

Author(s)Liu, Xinjun; Nandi, Sanjoy; Venkatachalam, Dinesh, et al
TypeConference paper
Date Published2014
Date CreatedDecember 14-17 2014

Graphene synthesis by C implantation into Cu foils

Author(s)Lee, Jae Sung; Jang, Chan Wook; Kim, Jong Min, et al
TypeJournal article
Date Published2014
Date Created-

In-situ XTEM Analysis of the Liquid Phase Epitaxial Growth of a-Si/Au alloy layer

Author(s)Venkatachalam, Dinesh; Llewellyn, David; Belay, Kidane, et al
TypeJournal article
Date Published2008
Date Created-

Nonvolatile-Memory Characteristics of AlO − -Implanted Al 2 O 3

Author(s)Kim, Min Choul; Kim, Sung; Choi, Suk Ho, et al
TypeJournal article
Date Published2009
Date Created-
Optical Materials Express.pdf.jpg

Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Author(s)Yan, Kunlun; Wang, Rongping; Vu, Khu, et al
TypeJournal article
Date Published20-Aug-2012
Date CreatedMay 1-6 2011

Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Author(s)Yan, Kunlun; Wang, Rongping; Vu, Khu, et al
TypeJournal article
Date Published2012
Date Created-

Reduced threshold current in NbO 2 selector by engineering device structure

Author(s)Liu, Xinjun; Nandi, Sanjoy; Venkatachalam, Dinesh, et al
TypeJournal article
Date Published2014
Date Created-

Resistance switching in polycrystalline NiOx thin film

Author(s)Kim, Tae-Hyun; Nawaz (Saleh), Muhammad; Kim, Sung-I, et al
TypeConference paper
Date Published2010
Date CreatedDecember 12-15 2010

Resistive Switching Behavior in HfO 2 with Nb as an Oxygen Exchange Layer

Author(s)Nandi, Sanjoy; Liu, Xinjun; Li, Shuai, et al
TypeConference paper
Date Published2014
Date CreatedDecember 14-17 2014

Resistive Switching on High-K dielectircs for Non-volatile Memory Applications

Author(s)Elliman, Robert; Nawaz (Saleh), Muhammad; Venkatachalam, Dinesh, et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012

Strain Relaxation behaviour in Germanium-on-insulator fabricated by Ion Implantation

Author(s)Kim, Tae-Hyun; Belay, Kidane; Llewellyn, David, et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012

Strain Relaxation in Germanium-on-Insulator fabricated by a modified Germanium Condensation

Author(s)Luther-Davies, Barry; Kim, Tae-Hyun; Belay, Kidane, et al
TypeConference paper
Date Published2010
Date CreatedDecember 12-15 2010
01_Saleh_The_effect_of_ion-implantation_2010.pdf.jpg

The effect of ion-implantation on the resistive switching response of NiO thin films

Author(s)Saleh, M.N.; Venkatachalam, Dinesh; Kim, Sung-I, et al
TypeConference paper
Date Published2010
Date CreatedNovember 25-27 2009

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