Browsing by Author Auret, Francois D
Showing results 1 to 10 of 10
Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS
Author(s) | Deenapanray, Prakash; Nyamhere, Cloud; Auret, Francois D, et al |
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Type | Journal article |
Date Published | 2006 |
Date Created | - |
Deep Level Properties of Erbium Implanted Epitaxially Grown SiGe
Author(s) | Mamor, M; Auret, Francois D; Goodman, S, et al |
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Type | Journal article |
Date Published | 1999 |
Date Created | - |
Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition
Author(s) | Deenapanray, Prakash; Lay, M; Aberg, D, et al |
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Type | Journal article |
Date Published | 2001 |
Date Created | - |
Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AIGaAs
Author(s) | Deenapanray, Prakash; Krispin, M; Meyer, W E, et al |
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Type | Conference paper |
Date Published | 2004 |
Date Created | December 1 2003 |
Electic-Field-Enhanced Emission and Annealing Behaviour of Electron Traps Introduced in n-Si by Low-Energy He Ion Bombardment
Author(s) | Deenapanray, Prakash; Meyer, W E; Auret, Francois D |
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Type | Journal article |
Date Published | 1999 |
Date Created | - |
Electrical Characterization and Annealing Properties of Electrically Active Defects Introduced in n-Si During Sputter Etching in an Ar-plasma
Author(s) | Deenapanray, Prakash; Auret, Francois D; Myburg, G |
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Type | Journal article |
Date Published | 1999 |
Date Created | - |
Electron emission properties of a defect at ~( E c �0.23eV) in impurity-free disorded n-GaAs
Author(s) | Deenapanray, Prakash; Meyer, W E; Auret, Francois D, et al |
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Type | Journal article |
Date Published | 2003 |
Date Created | - |
Electronic and Isochronal Annealing Properties of Electron Traps in Rapid Thermally Annealed SiO2-capped n-type GaAs Epitaxial Layers
Author(s) | Deenapanray, Prakash; Jagadish, Chennupati; Auret, Francois D, et al |
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Type | Journal article |
Date Published | 2000 |
Date Created | - |
Investigation of deep levels in rapid thermally annealed SiO2 capped n-GaAs grown by metalorganic chemical vapour deposition
Author(s) | Deenapanray, Prakash; Jagadish, Chennupati; Auret, Francois D, et al |
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Type | Journal article |
Date Published | 2000 |
Date Created | - |
Proton irradiation of n-type GaAs
Author(s) | Goodman, S; Auret, Francois D; Ridgway, Mark C, et al |
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Type | Journal article |
Date Published | 1999 |
Date Created | - |
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