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Acceptor-related metastable defects in compensated n-type silicon

Author(s)Rougieux, Fiacre; Phang, Sieu Pheng; Shalav, Avi, et al
TypeConference paper
Date Published2012
Date CreatedNovember 5-9 2012
1-s2.0-S0927024821005079-main.pdf.jpg

Reassessment of the intrinsic bulk recombination in crystalline silicon

Author(s)Niewelt, T; Steinhauser, B; Richter, A, et al
TypeJournal article
Date Published2022
Date Created-

The surface recombination velocity at boron doped emitters: Comparison between various passivation techniques

Author(s)Altermatt, Pietro P; Plagwitz, H; Bock, R, et al
TypeConference paper
Date Published2006
Date CreatedSeptember 4-8 2006
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