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Showing results 545 to 564 of 575

Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process

Author(s)Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati, et al
TypeJournal article
Date Published2007
Date Created-

Twinning superlattice formation in GaAs nanowires

Author(s)Burgess, Timothy; Breuer, Steffan; Caroff, Philippe, et al
TypeJournal article
Date Published2013
Date Created-

Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion

Author(s)Fu, Lan; Li, Qing; Kuffner, P, et al
TypeJournal article
Date Published2008
Date Created-

Two-photon luminescence study of optically trapped InP semiconductor nanowires

Author(s)Wang, Fan; Paiman, Suriati; Gao, Qiang, et al
TypeConference paper
Date Published2011
Date CreatedAugust 28-September 1 2011

Ultrafast carrier trapping and recombination in highly resistive ion implanted InP

Author(s)Carmody, C; Jagadish, Chennupati; Gaarder, A., et al
TypeJournal article
Date Published2003
Date Created-

Ultrafast dynamics in ZnO/ZnMgO multiple quantum wells

Author(s)Wen, XiaoMing; Davis, Jeff A; McDonald, David, et al
TypeJournal article
Date Published2007
Date Created-

Ultrafast Dynamics of Exciton Formation in Semiconductor Nanowires

Author(s)Yong, Chaw Keong; Joyce, Hannah J; Lloyd-Hughes, J, et al
TypeJournal article
Date Published2012
Date Created-
01_Baig_An_Ultrafast_Switchable_2017.pdf.jpg

An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires

Author(s)Baig, Sarwat E; Boland, Jessica L.; Damry, Djamshid A, et al
TypeJournal article
Date Published2017
Date Created-
01_Carmody_Ultrafast_trapping_times_in_2002.pdf.jpg

Ultrafast trapping times in ion implanted InP

Author(s)Carmody, C.; Boudinov, H.; Jagadish, C., et al
TypeJournal article
Date Published1-Sep-2002
Date Created-

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy

Author(s)Joyce, Hannah J; Wong-Leung, Jennifer; Yong, Chaw Keong, et al
TypeJournal article
Date Published2012
Date Created-

Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire

Author(s)Zhang, Xutao; Huang, Hai; Yao, Xiaomei, et al
TypeJournal article
Date Published28-Feb-2019
Date Created-

Ultrathin Ta₂O₅ electron-selective contacts for high efficiency InP solar cells

Author(s)Narangari, Parvathala Reddy; Karuturi, Siva Krishna; Wu, Yiliang, et al
TypeJournal article
Date Published2019
Date Created-
AAM-InGaP NWs with different Catalyst size 20191022.pdf.jpg

Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires

Author(s)Gao, Han; Sun, Qiang; Sun, Wen, et al
TypeJournal article
Date Published2019
Date Created-

Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires

Author(s)Ameruddin, Amira; Caroff, Philippe; Jagadish, Chennupati, et al
TypeJournal article
Date Published2015
Date Created-
01_Paladugu_Understanding_the_Kink_2006.pdf.jpg

Understanding the Kink Formation in GaAs/InAs Heterostructural Nanowires

Author(s)Paladugu, Mohanchand; Zou, Jin; Wang, Hui, et al
TypeConference paper
Date Published2006
Date CreatedJuly 3-7 2006

Understanding the true shape of Au-catalyzed GaAs nanowires

Author(s)Jiang, Nian; Wong-Leung, Jennifer; Joyce, Hannah Jane, et al
TypeJournal article
Date Published2014
Date Created-

Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

Author(s)Sun, W; Guo, Y.; Xu, Hong-Yi, et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012

Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111} B by metal-organic chemical vapor deposition

Author(s)Sun, W; Guo, YaNan; Xu, Hong-Yi, et al
TypeJournal article
Date Published2013
Date Created-

Unexpected Benefits of Rapid Growth Rate for III-V Nanowires

Author(s)Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati, et al
TypeJournal article
Date Published2009
Date Created-
WZ GaAs final-accepted-NoPublisher.pdf.jpg

Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires

Author(s)Yuan, Xiaoming; Li, Lin; Li, Ziyuan, et al
TypeJournal article
Date Published1-Apr-2019
Date Created-

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