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Showing results 241 to 260 of 574
03_Stewart Sears_In(Ga)As/GaAs_quantum_dots_2008.pdf.jpg

In(Ga)As/GaAs quantum dots grown by MOCVD for optoelectronic device applications

Author(s)Stewart Sears, Kalista; Mokkapati, Sudha; Jagadish, Chennupati, et al
TypeBook chapter
Date Published2008
Date Created-

In-plane coupling of light from InP-based photonic crystal band-edge lasers into single-mode waveguides

Author(s)Hattori, Haroldo; McKerracher, Ian; Jagadish, Chennupati, et al
TypeJournal article
Date Published2007
Date Created-

In<inf>x</inf>Ga<inf>1-x</inf>As nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology

Author(s)Ameruddin, Amira; Fonseka, Aruni; Caroff, Philippe, et al
TypeJournal article
Date Published2015
Date Created-

InAs Quantum Dots Grown on InGaAs Buffer Layers by Metal-Organic Chemical Vapor Deposition

Author(s)Stewart Sears, Kalista; Wong-Leung, Jennifer; Jagadish, Chennupati, et al
TypeJournal article
Date Published2005
Date Created-

Increasing the coupling efficiency of a microdisk laser to waveguides by using spiral structures

Author(s)Liu, Danyu; Hattori, Haroldo; Fu, Lan, et al
TypeConference paper
Date Published2010
Date CreatedDecember 12-15 2010
01_Liu_Increasing_the_coupling_2010.pdf.jpg

Increasing the coupling efficiency of a microdisk laser to waveguides by using well designed spiral structures

Author(s)Liu, Danyu; Hattori, Haroldo T.; Fu, Lan, et al
TypeJournal article
Date Published23-Feb-2010
Date Created-
Journal of Physics D- Applied Physics _ Final.pdf.jpg

Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer

Author(s)Raj, Vidur; Santos, Tamara; Rougieux, Fiacre, et al
TypeJournal article
Date Published2018
Date Created-

Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers

Author(s)Marcinkevicius, S; Jagadish, Chennupati; Kaminska, M, et al
TypeJournal article
Date Published2000
Date Created-
01_Carmody_Influence_of_cap_layer_on_2003.pdf.jpg

Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells

Author(s)Carmody, C.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published15-Apr-2003
Date Created-

Influence of Electrical Design on Core - Shell GaAs Nanowire Array Solar Cells

Author(s)Li, Zhe; Wenas, Yesaya; Fu, Lan, et al
TypeJournal article
Date Published2015
Date Created-

Influence of growth temperature and V/III ratio on Au-assisted In x Ga 1-x As nanowires

Author(s)Ameruddin, Amira; Fonseka, Aruni; Gao, Qiang, et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012

Influence of Low-Temperature Chemical Vapor Deposited SiO2 Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing

Author(s)Deenapanray, Prakash; Fu, Lan; Jagadish, Chennupati, et al
TypeJournal article
Date Published2000
Date Created-

Influence of Nanowire Density on the Shape and Optical Properties of Ternary InGaAs Nanowires

Author(s)Kim, Yong; Joyce, Hannah J; Gao, Qiang, et al
TypeJournal article
Date Published2006
Date Created-
01_Jolley_Influence_of_quantum_well_and_2007.pdf.jpg

Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, G; Fu, Lan; Jagadish, C., et al
TypeJournal article
Date Published25-Oct-2007
Date Created-

Influence of SiO2 and TiO2 dielectric layers on the atomic intermixing of InxGa1-xAs/InP quantum well structures

Author(s)Gareso, P; Buda, Manuela; Fu, Lan, et al
TypeJournal article
Date Published2007
Date Created-

Influence of SiOx, Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells

Author(s)Deenapanray, Prakash; Jagadish, Chennupati; Tan, Hark Hoe
TypeJournal article
Date Published2000
Date Created-
01_Lloyd-Hughes_Influence_of_surface_2006.pdf.jpg

Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

Author(s)Lloyd-Hughes, J.; Merchant, S. K. E.; Lan, F., et al
TypeJournal article
Date Published4-Dec-2006
Date Created-

InGaAs Quantum Dots Grown with GaP Strain Compensation Layers

Author(s)Lever McGowan, Penelope; Jagadish, Chennupati; Tan, Hark Hoe
TypeJournal article
Date Published2004
Date Created-

InGaAsN Quantum Dots for Long Wavelength Lasers

Author(s)Gao, Qiang; Buda, Manuela; Jagadish, Chennupati, et al
TypeConference paper
Date Published2006
Date CreatedJuly 3-7 2006

InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting

Author(s)Butson, Joshua; Narangari, Parvathala Reddy; Lysevych, Mykhaylo, et al
TypeJournal article
Date Published2019
Date Created-

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