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Showing results 107 to 126 of 678

Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells

Author(s)Hall, C R; Dao, Lap Van; Koike, Kazuto, et al
TypeConference paper
Date Published2010
Date CreatedDecember 12-15 2010

Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells

Author(s)Hall, C R; Dao, Lap Van; Koike, Kazuto, et al
TypeConference paper
Date Published2010
Date Created18 July 2010 through 23 July 2010

Dynamics of Strongly Degenerate Electron-Hole Plasmas and Excitons in Single InP Nanowires

Author(s)Titova, Lyubov V; Hoang, Thang B; Yarrison-Rice, Jan M, et al
TypeJournal article
Date Published2007
Date Created-
Adv Energy and Sustain Res - 2021 - Zhang - Earth‐Abundant Amorphous Electrocatalysts for Electrochemical Hydrogen.pdf.jpg

Earth-Abundant Amorphous Electrocatalysts for Electrochemical Hydrogen Production: A Review

Author(s)Zhang, Doudou; Soo, Joshua Zheyan; Tan, Hark Hoe, et al
TypeJournal article
Date Published2020
Date Created-

Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires

Author(s)Chen, Yujie; Burgess, Timothy; An, Xianghai, et al
TypeJournal article
Date Published2016
Date Created-

Effect of active region position in Fabry-Perot single transverse mode broad-waveguide InGaAsP/InP lasers

Author(s)Lysevych, M; Tan, Hark Hoe; Karouta, F, et al
TypeJournal article
Date Published7-Apr-2014
Date Created-
s41598-021-00855-w.pdf.jpg

Effect of Au substrate and coating on the lasing characteristics of GaAs nanowires

Author(s)Aman, Gyanan; Mohammadi, Fatemesadat; Fraenzl, Martin, et al
TypeJournal article
Date Published2021
Date Created-

Effect of Auger Recombination on the Performance of p-doped Quantum Dot Lasers

Author(s)Mokkapati, Sudha; Buda, Manuela; Jagadish, Chennupati, et al
TypeJournal article
Date Published2006
Date Created-
01_Fu_Effect_of_GaP_strain_2007.pdf.jpg

Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Author(s)Fu, Lan; McKerracher, I.; Jagadish, C., et al
TypeJournal article
Date Published15-Aug-2007
Date Created-

Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

Author(s)Guo, YaNan; Zou, Jin; Joyce, Hannah J, et al
TypeConference paper
Date Published2010
Date CreatedDecember 12-15 2010

Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots

Author(s)Li, Qing; Barik, Satyanarayan; Jagadish, Chennupati, et al
TypeJournal article
Date Published2008
Date Created-
01_Lei_Effect_of_matrix_material_on_2009.pdf.jpg

Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures

Author(s)Lei, W.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published2009
Date Created-

Effect of plasmonic nanoparticles on the quantum efficiency of lll-V semiconductor nanorwire emitters

Author(s)Mokkapati, Sudha; Saxena, Dhruv; Gao, Qiang, et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012

Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn- and C-Doped InGaAs/AlGaAs Quantum Well Laser Structures

Author(s)Gareso, Paulus; Buda, Manuela; Petravic, Mladen, et al
TypeJournal article
Date Published2006
Date Created-
01_Gareso_The_effect_of_rapid_thermal_2017.pdf.jpg

The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes

Author(s)Gareso, P; Buda, Manuela; Tan, Hark Hoe, et al
TypeJournal article
Date Published2017
Date Created-
01_Gao_Effect_of_Sn_Addition_on_2019.pdf.jpg

Effect of Sn Addition on Epitaxial GaAs Nanowire Grown at Different Temperatures in Metal-Organic Chemical Vapor Deposition

Author(s)Gao, Han; Sun, Qiang; Lysevych, Mykhaylo, et al
TypeJournal article
Date Published2019
Date Created-

The effect of Sn addition on GaAs nanowire grown by vapor-liquid-solid growth mechanism

Author(s)Gao, Han; Lysevych, Mykhaylo; Tan, Hark Hoe, et al
TypeJournal article
Date Published2018
Date Created-

Effect of the crystal structure on the optical properties of InP nanowires

Author(s)Paiman, Suriati; Gao, Qiang; Jagadish, Chennupati, et al
TypeConference paper
Date Published2009
Date CreatedOctober 4-8 2009

Effects of a p-n junction on heterojunction far infrared detectors

Author(s)Matsik, S G; Rinzan, MBM; Perera, AGU, et al
TypeJournal article
Date Published2007
Date Created-
01_Xu_Effects_of_annealing_and_2009.pdf.jpg

Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Author(s)Xu, H. Y.; Guo, Y. N.; Wang, Y., et al
TypeJournal article
Date Published23-Oct-2009
Date Created-

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