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Showing results 8 to 27 of 142
Macdonald_Capture2001.pdf.jpg

Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements

Author(s)Macdonald, D; Cuevas, Andres; Wong-Leung, Jennifer
TypeJournal article
Date Published15-Jun-2001
Date Created-
Gustafsson_2020_Nanotechnology_31_424001.pdf.jpg

Cathodoluminescence visualisation of local thickness variations of GaAs/AlGaAs quantum-well tubes on nanowires

Author(s)Gustafsson, A.; Jiang, Nian; Zheng, Changlin, et al
TypeJournal article
Date Published2020
Date Created-

CdS/TiO2 photoanodes via solution ion transfer method for highly efficient solar hydrogen generation

Author(s)Karuturi, Siva Krishna; Yew, Rowena; Narangari, Parvathala Reddy, et al
TypeJournal article
Date Published2018
Date Created-

Comparison between implanted boron and phosphorus in silicon wafers

Author(s)Burgess, Jack; Johnson, Brett; Villis, Byron, et al
TypeConference paper
Date Published2010
Date CreatedDecember 12-15 2010
01_Schifano_Comparison_of_the_structural_2017.pdf.jpg

Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering

Author(s)Schifano, Ramon; Riise, Heine N; Domagała, Jarosław Zbigniew, et al
TypeJournal article
Date Published2017
Date Created-

Compound semiconductor nanowires for optoelectronic devices

Author(s)Gao, Qiang; Jiang, Nian; Joyce, Hannah J, et al
TypeConference paper
Date Published2013
Date CreatedJune 30-July 4 2013

Controlling the morphology, composition and crystal structure in gold-seeded GaAs(₁-ₓ)Sbₓ nanowires

Author(s)yuan, xiaoming; Caroff, Philippe; Wong-Leung, Jennifer, et al
TypeJournal article
Date Published21-Mar-2015
Date Created-

Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires

Author(s)Rota, Michele B.; Ameruddin, Amira; Wong-Leung, Jennifer, et al
TypeJournal article
Date Published2017
Date Created-
01_Chan_Defect_formation_and_thermal_2013.pdf.jpg

Defect formation and thermal stability of H in high dose H implanted ZnO

Author(s)Chan, K. S.; Vines, L.; Johansen, K. M., et al
TypeJournal article
Date Published29-Aug-2013
Date Created-

Defect Formation Due to the Crystallization of Deep Amorphous Volumes Formed in Silicon by Mega Electron Volt (MeV) Ion Implantation

Author(s)Liu, A. C. Y.; McCallum, Jeffrey C.; Wong-Leung, Jennifer
TypeJournal article
Date Published2001
Date Created-

Diffusion and Transient Trapping of Metals in Silicon

Author(s)Wong-Leung, Jennifer; Williams, James; Kinomura, A, et al
TypeJournal article
Date Published1999
Date Created-

Direct correlation of R-line luminescence with rod-like defect evolution in ion-implanted and annealed silicon

Author(s)Charnvanichborikarn, Supakit; Wong-Leung, Jennifer; Jagadish, Chennupati, et al
TypeJournal article
Date Published2012
Date Created-

Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions

Author(s)Yong, Chaw Keong; Wong-Leung, Jennifer; Joyce, Hannah J, et al
TypeJournal article
Date Published2013
Date Created-

Direct observation of the impurity gettering layers in polysilicon-based passivating contacts for silicon solar cells

Author(s)Liu, AnYao; Yan, Di; Wong-Leung, Jennifer, et al
TypeJournal article
Date Published19-Apr-2018
Date Created-
01_Williams_Direct_observation_of_voids_in_2001.pdf.jpg

Direct observation of voids in the vacancy excess region of ion bombarded silicon

Author(s)Williams, J. S.; Conway, M. J.; Williams, B. C., et al
TypeJournal article
Date Published7-May-2001
Date Created-
01_Johnson_Dopant_effects_on_the_2012.pdf.jpg

Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

Author(s)Johnson, B. C.; Villis, B. J.; Burgess, J. E., et al
TypeJournal article
Date Published10-May-2012
Date Created-
01_Kuznetsov_Dynamic_annealing_in_ion_2003.pdf.jpg

Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

Author(s)Kuznetsov, A. Yu.; Wong-Leung, Jennifer; Hallén, A., et al
TypeJournal article
Date Published1-Dec-2003
Date Created-

Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon

Author(s)McCallum, Jeffrey C.; Villis, Byron; Johnson, Brett, et al
TypeJournal article
Date Published2011
Date Created-

Effect of boron on interstitial-related luminescence centers in silicon

Author(s)Charnvanichborikarn, Supakit; Villis, Byron; Johnson, Brett, et al
TypeJournal article
Date Published2010
Date Created-
01_Wong-Leung_Effect_of_crystal_orientation_2003.pdf.jpg

Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals

Author(s)Wong-Leung, Jennifer; Janson, M. S.; Svensson, B. G.
TypeJournal article
Date Published1-Jun-2003
Date Created-

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