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Showing results 7 to 9 of 9

MP2-photoluminescence from GESN layers fabricated using ion implantation and pulsed laser melting

Author(s)Mathews, Jay; Tran, Tuan; Liu, Yining, et al
TypeConference paper
Date Published2019
Date CreatedJuly 8-10 2019
01_Alkhaldi_Porosity_as_a_function_of_2017.pdf.jpg

Porosity as a function of stoichiometry and implantation temperature in Ge/Si1-xGex alloys (vol 119, 094303, 2016)

Author(s)Alkhaldi, Huda; Kremer, Felipe; Bierschenk, Thomas, et al
TypeJournal article
Date Published2017
Date Created-
01_Tran_Towards_a_direct_band_gap_2019.pdf.jpg

Towards a direct band gap group IV Ge-based material

Author(s)Tran, Tuan; Matthews, Jay; Williams, James
TypeJournal article
Date Published23-Jul-2018
Date Created-

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