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Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Author(s)Liu, An Yao; Sun, Chang; Markevich, Vladimir P, et al
TypeJournal article
Date Published2016
Date Created-

Hydrogen passivation of Interstitial Iron in Silicon by Annealing with PECVD Silicon Nitride Films

Author(s)Liu, An Yao; Sun, Chang; MacDonald, Daniel
TypeConference paper
Date Published2015
Date CreatedSeptember 14-18 2015
Sun Thesis 2017.pdf.jpg

Recombination Activity of Metal-related and Boron-oxygen Defects in Crystalline Silicon

Author(s)Sun, Chang
TypeThesis (PhD)
Date Published2017
Date Created-
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