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Acceptor-related metastable defects in compensated n-type silicon

Author(s)Rougieux, Fiacre; Phang, Sieu Pheng; Shalav, Avi, et al
TypeConference paper
Date Published2012
Date CreatedNovember 5-9 2012

Activation Kinetics of the Boron-oxygen Defect in Compensated n- and p-type Silicon Studied by High-Injection Micro-Photoluminescence

Author(s)Sun, Ryan; Nguyen, Hieu; Sio, Hang Cheong (Kelvin), et al
TypeJournal article
Date Published2017
Date Created-

Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

Author(s)Rougieux, Fiacre; Nguyen, Hieu; MacDonald, Daniel, et al
TypeJournal article
Date Published2017
Date Created-

Impact of minority-impurity scattering on the carrier mobility in compensated silicon

Author(s)Rougieux, Fiacre; Forster, Maxime; MacDonald, Daniel, et al
TypeConference paper
Date Published2012
Date CreatedNovember 5-9 2012
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